1/9 july 2003 STQ1NC60R n-channel 600v - 12 w -0.3ato-92 powermesh?ii power mosfet n typical r ds (on) = 12 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description using the latest high voltage mesh overlay?ii process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termi- nation structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n low switch mode power supplies (smps) n battery charger ordering information type v dss r ds(on) i d STQ1NC60R 600 v < 15 w 0.3 a sales type marking package packaging STQ1NC60R q1nc60r to-92 bulk STQ1NC60R-ap q1nc60r to-92 ammopack to-92 to-92 bulk (ammopack) internal schematic diagram
STQ1NC60R 2/9 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 0.3a, di/dt 100a/s, v dd v (br)dss ,t j t jmax. thermal data avalanche characteristics electrical characteristics (tcase =25c unless otherwise specified) on/off symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 0.3 a i d drain current (continuous) at t c = 100c 0.19 a i dm ( ) drain current (pulsed) 1.2 a p tot total dissipation at t c = 25c 3.1 w derating factor 0.025 w/c dv/dt (1) peak diode recovery voltage slope 3 v/ns t j t stg operating junction temperature storage temperature -65 to 150 -65 to 150 c c to-92 rthj-amb thermal resistance junction-ambient max 120 c/w rthj-lead thermal resistance junction-lead max 40 c/w t l maximum lead temperature for soldering purpose 260 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 0.3 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 60 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 234v r ds(on) static drain-source on resistance v gs =10v,i d = 0.3 a 12 15 w
3/9 STQ1NC60R electrical characteristics (tcase =25c unless otherwise specified) dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 0.3 a 0.87 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs =0 108 18 2.5 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =300v,i d = 0.5 a r g = 4.7 w v gs =10v (resistive load see, figure 3) 7.2 8 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480v,i d =1a, v gs =10v,r g = 4.7 w 7.3 3.4 2.5 10 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d =1a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 33 11 43 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 0.3 1.2 a a v sd (1) forward on voltage i sd = 0.3 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1 a, di/dt = 100a/s v dd =25v,t j = 150c (see test circuit, figure 5) 450 720 3.2 ns m c a thermal impedance safe operating area
STQ1NC60R 4/9 . gate charge vs gate-source voltage capacitance variations tranconductance output characteristics transfer characteristics static drain-source on resistance
5/9 STQ1NC60R normalized on resistance vs temperature normalized gate thereshold voltage vs temp. source-drain diode forward characteristics
STQ1NC60R 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STQ1NC60R dim. mm. inch min. typ max. min. typ. max. a 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 l 12.70 15.49 0.50 0.610 r 2.16 2.41 0.085 0.094 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 mechanical data
STQ1NC60R 8/9 dim. mm. inch min. typ max. min. typ. max. a1 4.8 0.19 t 3.8 0.15 t1 1.6 0.06 t2 2.3 0.09 d 0.48 0.02 p0 12.5 12.7 12.9 0.49 0.5 0.51 p2 5.65 6.35 7.05 0.22 0.25 0.27 f1, f2 2.44 2.54 2.94 0.09 0.1 0.11 delta h -2 2 -0.08 0.08 w 17.5 18 19 0.69 0.71 0.74 w0 5.7 6 6.3 0.22 0.23 0.24 w1 8.5 9 9.25 0.33 0.35 0.36 w2 0.5 0.02 h 18.5 20.5 0.72 0.80 h0 15.5 16 16.5 0.61 0.63 0.65 h1 25 0.98 d0 3.8 4 4.2 0.15 0.157 0.16 t 0.9 0.035 l 11 0.43 l1 3 0.11 delta p -1 1 -0.04 0.04 to-92 ammopack
9/9 STQ1NC60R information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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